UMX1N (120-550)

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Transistors JC(T UMX1N DUAL TRANSISTOR (NPN+NPN) FEATURES Two 2SC2412K chips in a SOT-563 package z Mounting possible with SOT-563 automatic mounting machines z Transistor elements are independent, eliminating interference z z Mounting cost and area can be cut in half SOT-363 MARKING:X1 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 7 V IC Collector Current -Continuous 150 mA PC Collector Power Dissipation 150 mW TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ M ax Unit Collector-base breakdown voltage V(BR)CBO IC=50μA,IE=0 60 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0 50 V Emitter-base breakdown voltage V(BR)EBO IE=50μA,IC=0 7 V Collector cut-off current ICBO VCB=60V,IE=0 0.1 μA Emitter cut-off current IEBO VEB=7V,IC=0 0.1 μA DC current gain hFE VCE=6V,IC=1mA Collector-emitter saturation voltage Transition frequency Collector output capacitance www.cj-elec.com VCE(sat) fT Cob 120 560 IC=50mA,IB=5mA 0.4 VCE=12V,IC=2mA,f=100MHz 180 VCB=12V,IE=0,f=1MHz 2.0 1 V MHz 3.5 pF C,Oct,2014 Symbol A A1 A2 b c D E E1 e e1 L L1 θ www.cj-elec.com 2 Dimensions In Millimeters Min Max 0.900 1.100 0.000 0.100 0.900 1.000 0.150 0.350 0.080 0.150 2.000 2.200 1.150 1.350 2.150 2.450 0.650 TYP 1.200 1.400 0.525 REF 0.260 0.460 0° 8° Dimensions In Inches Min Max 0.035 0.043 0.000 0.004 0.035 0.039 0.006 0.014 0.003 0.006 0.079 0.087 0.045 0.053 0.085 0.096 0.026 TYP 0.047 0.055 0.021 REF 0.010 0.018 0° 8° A,Jun,2014 C,Oct,2014 www.cj-elec.com 3 A,Jun,2014 C,Oct,2014